ace 1441 9t p - channel enhancement mode power mosfet ver 1 .1 1 d escription the ace14419t uses advanced trench technology to provide excellent r ds , low gate charge and operation with gate voltages as low as 4.5v. rohs compliant halogen free features ? v ds (v) = - 30 v,i d = - 9.1a ? r ds(on) <20m @ v gs = - 10v ? r ds(on )<30m @ v g s = - 4.5v ? sop - 8 package absolute maximum ratings p arameter s ymbol m ax u nit drain - source voltage v ds - 3 0 v gate - source voltage v gs 20 v drain current (continuous) t a =25 o c i d - 9.1 a t a =70 o c - 7.5 drain current (pulse) i dm - 50 power dissipation t a =25 o c p d 3.1 w operating and storage temperature range t j, t stg - 55 to 150 o c thermal data parameter symbol value unit thermal resistance junction - case rthj - c 24 o c/w thermal resistance junction - ambient rthj - a 48 o c/w packaging type so p - 8
ace 1441 9t p - channel enhancement mode power mosfet ver 1 .1 2 ordering i nformation ace 1441 9t xx + h electrical characteristics t a =2 5 o c un less otherwise noted parameter symbol conditions min. typ. max. unit static drain - source breakdown voltage v (br)dss v gs =0 v, i d = - 250ua - 30 v zero gate voltage drain current i dss v ds = - 3 0 v, v gs =0v - 1 ua gate threshold voltage v gs(th) v ds =v gs , i d s = - 250 a - 1 - 1.5 - 3 v gate leakage current i gss v gs = 20 v, v ds =0v 100 na static drain - source on - resistance r ds(on) v gs = - 10 v, i d = - 9.1 a 20 m v gs = - 4.5 v, i d = - 6.9 a 30 forward trans c onductance g fs v g s = - 15 v, i d = - 9 a 10 s diode forward voltage v sd i sd = - 2 .5 a, v gs =0v - 1.2 v reverse recovery time trr i s = - 7a,v gs = 0 v, dl/dt=100a/s 26 ns reverse recovery charge qrr 17 nc switching total gate charge q g v gs = - 10 v , v ds = - 15 v, i d = - 7 a , 17 nc gate - source charge q gs 5.3 gate - drain charge q gd 7.9 turn - on delay time t d(on) v gs = - 10 v , v dd = - 15 v, i d = - 1 a , r gen = 3.3 8.5 ns turn - on rise time t f 7.5 turn - off delay time t d(off) 4 2 turn - off fall time t f 28 dynamic input capacitance c iss v gs =0v , v ds = - 1 5 v, f= 1m hz 1530 pf output capacitance c oss 313 reverse transfer capacitance c rss 281 pulse test: pulse width ?300s, duty cycle 2.0% fm : sop - 8 pb - free halogen - free
ace 1441 9t p - channel enhancement mode power mosfet ver 1 .1 3 typical performance charac teristics
ace 1441 9t p - channel enhancement mode power mosfet ver 1 .1 4
ace 1441 9t p - channel enhancement mode power mosfet ver 1 .1 5
ace 1441 9t p - channel enhancement mode power mosfet ver 1 .1 6 packing information so p - 8 unit: mm
ace 1441 9t p - channel enhancement mode power mosfet ver 1 .1 7 notes ace does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the label ing, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or s ystem, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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